digital transistors (built-in resistors) dta114tm/dta114te/dta114tua dta114tka /DTA114TCA/dta114tsa equivalent circuit digital transistor (pnp) features ? built-in bias resistors enable the conf iguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of th in-film resistors with complete isolation to allow posit ive biasing of the inpu t.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dta114tm sot-723 1. in 2. gnd 3. out marking:94 dta114te sot-523 1. in 2. gnd 3. out marking:94 dta114tua sot-323 1. in 2. gnd 3. out marking:94 dta114tka sot-23-3l 1. in 2. gnd 3. out marking:94 DTA114TCA sot-23 1. in 2. gnd 3. out marking:94 dta114tsa to-92s 1. gnd 2. out 3. in (b) (c) (e) 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
maximum ratings(ta= 25 unless otherwise noted) limits(dta114t ) symbol parameter m e ua ka ca sa unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -100 ma p d power dissipation 100 150 200 200 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta= 25 unless otherwise specified) parameter symbol conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-50a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo ic=-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.5 emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 dc current gain h fe v ce =-5v,i c =-1ma 100 250 600 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.3 v transition frequency f t v ce =-10v,i e input resistor r 1 7 10 13 k ? 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
-0.1 -1 -10 -100 10 100 1000 -0.1 -1 -10 -0.1 -1 -10 -100 -0.1 -1 -10 -100 -0.1 -1 -10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 -0.1 -1 -10 -100 -10 -100 -0 -1 -2 -3 -4 -5 -6 -7 -0 -1 -2 -3 -4 -5 -0.1 -1 -10 1 10 t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter vce= -5v base-emmiter voltage v be (v) collector current i c (ma) t a = 2 5 t a = 1 0 0 common emitter vce=-5v i c ?? v be =10 base-emitter saturation voltage v besat (v) collector curremt i c (ma) i c v besat ?? -50 t a =100 t a =25 ambient temperature t a ( ) power dissipation p d (mw) p d ?? t a dta114tm dta114te DTA114TCA/tua/tka dta114tsa t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -500 i c h fe ?? dta114txx common emitter t a =25 -20ua -18ua -16ua -14ua -12ua -10ua -8ua -6ua -4ua i b =-2ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) c ib c ob capacitance c (pf) reverse voltage v (v) -30 20 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
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